IRF7523D1 Datasheet, PDF (2/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode(Vdss=30V, Rds(on)=0.11ohm, Schottky Vf=0.39V)

IRF7523D1
2
MOSFET Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
R_DS(on)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30 — — V
— 0.090 0.130 _Ω
— 0.140 0.190
1.0 — — V
1.9 — — S
— — 1.0
µA
— — 25
— — -100
nA
— — 100
— 7.8 12
— 1.2 1.8 nC
— 2.5 3.8
— 4.7 —
— 10 — _ns
— 12 —
— 5.3 —
— 210 —
— 80 — pF
— 32 —
V_GS = 0V, I_D = 250µA
V_GS = 10V, I_D = 1.7A ƒ
V_GS = 4.5V, I_D = 0.85A ƒ
V_DS = V_GS, I_D = 250µA
V_DS = 10V, I_D = 0.85A
V_DS = 24V, V_GS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
V_GS = -20V
V_GS = 20V
I_D = 1.7A
V_DS = 24V
V_GS = 10V (see figure 6) Ž
V_DD = 15V
I_D = 1.7A
R_G = 6.1Ω
R_D = 8.7Ω Ž
V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units Conditions
I_S
Continuous Source Current (Body Diode) — — 1.25 A
I_SM
Pulsed Source Current (Body Diode) — — 21
V_SD
Body Diode Forward Voltage
— — 1.2
V
T_J = 25°C, I_S = 1.7A, V_GS = 0V
t_rr
Reverse Recovery Time (Body Diode) — 40 60 ns T_J = 25°C, I_F = 1.7A
Q_rr
Reverse Recovery Charge
— 48 72 nC di/dt = 100A/µs Ž
Schottky Diode Maximum Ratings
Parameter
Max. Units.
Conditions
IF(av)
Max. Average Forward Current
1.9 A 50% Duty Cycle. Rectangular Wave, T_A = 25°C
1.3
See Fig.14
T_A = 70°C
I_SM
Max. peak one cycle Non-repetitive
120
5µs sine or 3µs Rect. pulse
Following any rated
Surge current
11 _A
10ms sine or 6ms Rect. pulse load condition &
with V_RRM applied
Schottky Diode Electrical Specifications
Parameter
V_FM
Max. Forward voltage drop
I_RM
C_t
dv/dt
2
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.50
0.62
0.39 ^V
0.57
0.06 _mA
16
92 pF
3600 V/ µs
Conditions
I_F = 1.0A, T_J = 25°C
I_F = 2.0A, T_J = 25°C
I_F = 1.0A, T_J = 125°C
I_F = 2.0A, T_J = 125°C .
V_R = 30V T_J = 25°C
TJ = 125°C
V_R = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated V_R
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