IRF7523D1 Datasheet, PDF (1/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode(Vdss=30V, Rds(on)=0.11ohm, Schottky Vf=0.39V)

PD- 91647C
IRF7523D1
FETKY^™ MOSFET / Schottky Diode
q Co-packaged HEXFET^® Power MOSFET
and Schottky Diode
A
1
q N-Channel HEXFET
A
2
q Low V_F Schottky Rectifier
q Generation 5 Technology
q Micro8^TM Footprint
S
3
G
4
8
K
7
K
6
D
V_DSS = 30V
R_DS(on) = 0.11Ω
5 _{D Schottky Vf = 0.39V}
Description
Top View
The FETKY^TM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8^TM package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8^TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8^TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8^TM
Absolute Maximum Ratings (T_A = 25°C unless otherwise noted)
Parameter
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Continuous Drain Current, V_GS@10V
Pulsed Drain Current Œ
Power Dissipation 
Linear Derating Factor
Maximum
2.7
2.1
21
1.25
0.8
10
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
± 20
6.2
T_J, T_STG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
R_θJA
Junction-to-Ambient 
Maximum
100
Units
A
W
W/°C
V
V/ns
°C
Units
°C/W
Notes:
ΠRepetitive rating; pulse width limited by maximum junction temperature (see figure 11)
 I_SD ≤ 1.7A, di/dt ≤ 120A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
Ž Pulse width ≤ 300µs; duty cycle ≤ 2%
 When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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