IRF7353D1PBF Datasheet, PDF (5/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode

Power Mosfet Characteristics
IRF7353D1PbF
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P_DM
t₁
t₂
0.1
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
T_J = 150°C
10
T_J = 25°C
1
VGS = 0V _A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD , Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode
Forward Voltage
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