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| IRF7353D1PBF Datasheet, PDF (2/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode | |||
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IRF7353D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30 â â V
â 0.023 0.032 â¦
â 0.032 0.046
1.0 â â V
â 14 â S
â â 1.0
µA
â â 25
â â 100
nA
â â -100
â 22 33
â 2.6 3.9 nC
â 6.4 9.6
â 8.1 12
â 8.9 13 ns
â 26 39
â 17 26
â 650 â
â 320 â pF
â 130 â
VGS = 0V, ID = 250µA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.7A
VDS = VGS, ID = 250µA
VDS = 24V, ID = 5.8A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
VGS = 20V
VGS = -20V
ID = 5.8A
VDS = 24V
VGS = 10V (see figure 8)
VDD = 15V
ID = 1.0A
RG = 6.0â¦
RD = 15â¦
VGS = 0V
VDS = 25V
Æ = 1.0MHz (see figure 7)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current (Body Diode) â â 2.5 A
ISM
Pulsed Source Current (Body Diode)
â â 30
VSD
Body Diode Forward Voltage
â 0.78 1.0
V
TJ = 25°C, IS = 1.7A, VGS = 0V
trr
Reverse Recovery Time (Body Diode) â 45 68 ns TJ = 25°C, IF = 1.7A
Qrr
Reverse Recovery Charge
â 58 87 nC di/dt = 100A/µs Ã
Schottky Diode Maximum Ratings
Parameter
IF(av)
Max. Average Forward Current
ISM
Max. peak one cycle Non-repetitive
Surge current
Max. Units.
2.7 A
1.9
120
11 A
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
See Fig. 14
TA = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with V applied
RRM
Schottky Diode Electrical Specifications
Parameter
VFM
Max. Forward voltage drop
IRM
Ct
dv/dt
2
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.50
0.62
0.39 V
0.57
0.06 mA
16
92 pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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