IRF7353D1PBF Datasheet, PDF (4/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode

IRF7353D1PbF
Power Mosfet Characteristics
0.040
0.12
0.036
V _GS = 4.5V
0.10
0.032
0.028
0.024
V_GS = 10V
0.08
0.06
I _D = 5.8A
0.04
0.02
0.020
0
10
20
30
I_D , Drain Current (A)
A
40
0.00
0
3
6
A
9
12
15
V _GS , Gate-to-Source Voltage (V)
Fig 5. Typical On-Resistance Vs. Drain
Current
Fig 6. Typical On-Resistance Vs. Gate
Voltage
1200
900
600
300
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C _gd
C_iss
Coss
Crss
20
ID = 5.8A
16
12
8
4
V_DS = 15V
0
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance Vs.
Drain-to-Source Voltage
4
0
0
10
20
30
40
Q_G, Total Gate Charge (nC)
Fig 8. Typical Gate Charge Vs.
Gate-to-Source Voltage
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