IRF7353D1PBF Datasheet, PDF (3/8 Pages) International Rectifier – FETKY™ MOSFET / Schottky Diode

100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
Power Mosfet Characteristics
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
IRF7353D1PbF
10
3.0V
3.0V
20µs PULSE WIDTH
1
T_J = 25°C
A
0.1
1
10
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
1
T_J = 150°C
A
0.1
1
10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25°C
T_J = 150°C
10
V_DS = 10V
20µs PULSE WIDTH
1
A
3.0
3.5
4.0
4.5
5.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = 5.8A}
1.5
1.0
0.5
V_GS= 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3