IRF7324D1PBF Datasheet, PDF (5/8 Pages) International Rectifier – FETKY™MOSFET / Schottky Diode

IRF7324D1PbF
Power Mosfet Characteristics
600
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
500
Crss = Cgd
Coss = Cds + Cgd
400
12
ID= -2.2A
10
VDS= -16V
VDS= -10V
8
300
Ciss
6
200
100
0
1
Coss
Crss
10
100
-VDS, Drain-to-Source Voltage (V)
4
2
0
0
2
4
6
8
10 12
QG Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t₁
t₂
0.1
0.0001
0.001
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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