IRF7324D1PBF Datasheet, PDF (3/8 Pages) International Rectifier – FETKY™MOSFET / Schottky Diode

1000
100
10
TOP
BOTTOM
VGS
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
-1.5V
IRF7324D1PbF
Power Mosfet Characteristics
100
VGS
TOP
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
10
-2.5V
-2.0V
BOTTOM -1.5V
1
0.1
0.01
0.1
-1.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
1
10
-VDS, Drain-to-Source Voltage (V)
1
0.1
0.1
-1.5V ≤ ^{60µs PULSE WIDTH}
Tj = 150°C
1
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
10.0
TJ = 25°C
TJ = 150°C
100.0
10.0
TJ = 150°C
1.0
0.1
1.0
VDS = -10V
≤ 60µs PULSE WIDTH
2.0 3.0 4.0 5.0 6.0 7.0
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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1.0
TJ = 25°C
0.1
0.4
VGS = 0V
0.6 0.8 1.0 1.2 1.4 1.6
-VSD, Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3