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| IRF7324D1PBF Datasheet, PDF (2/8 Pages) International Rectifier – FETKY™MOSFET / Schottky Diode | |||
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IRF7324D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
RDS(on)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-20 âââ âââ
âââ 0.155 0.270
âââ 0.260 0.400
-0.70 âââ âââ
âââ âââ -1.0
âââ âââ -25
âââ âââ 100
âââ âââ -100
2.4 âââ âââ
âââ 5.2 7.8
âââ 0.88 âââ
âââ 2.5 âââ
âââ 10 âââ
âââ 12 âââ
âââ 11 âââ
âââ 7.6 âââ
âââ 260 âââ
âââ 140 âââ
âââ 70 âââ
V
â¦
VGS = 0V, ID = -250µA
e VGS = -4.5V, ID = -1.2A
e VGS = -2.7V, ID = -0.6A
V VDS = VGS, ID = -250µA
µA VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
nA VGS = -12V
VGS = 12V
S VDS = -16V, ID = -2.2A
ID = -2.2A
nC VGS = -4.5V
e VDD = -16V
VDD = -10V, VGS = -4.5V
ID = -2.2A
ns RG = 6.0â¦
RD = 4.5â¦
VGS = 0V
pF VDS = -15V
Æ = 1.0MHz
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ -2.2
âââ âââ -22
âââ âââ -1.2
e V TJ = 25°C, IS = -2.2A, VGS = 0V
âââ 26 39 ns TJ = 25°C, IF = -2.2A, VDD = -10V
e âââ 24 36 nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
IF(av)
Max. Average Forward current
1.7
50% Duty Cycle Rectangular Wave, TA = 25°C
1.2 A
TA = 70°C
ISM
Max.Peak one cycle Non-repetitive
120
5µs sine or 3µs Rect. Pulse
Following any rated
Surge Current
11
10ms sine or 6ms Rect. Pulse
load condition &
with VRRM applied
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
VFM
IRM
Ct
dV/dt
2
Max. Forward Voltage Drop
Max. Reverse Leakage Current
Max. Junction Capacitance
Max. Voltage Rate of Charge
0.50
0.62
0.39
0.57
0.05
10
92
3600
V IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C
mA VR = 20V
TJ = 25°C
TJ = 125°C
pF VR = 5Vdc (100kHz to 1MHz) 25°C
V/µs Rated VR
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