IRF7324D1PBF Datasheet, PDF (4/8 Pages) International Rectifier – FETKY™MOSFET / Schottky Diode

IRF7324D1PbF
1.5
ID = -2.2A
VGS = -4.5V
Power Mosfet Characteristics
0.164
0.160
VGS= - 4.5V
0.156
1.0
0.152
0.148
VGS= - 5.0V
0.144
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
0.140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current (A)
Fig 6. Typical On-Resistance Vs.
Drain Current
0.4
ID = -2.2A
TJ = 25°C
0.3
0.2
0.1
0.0
2.0
4.0
6.0
8.0
10.0
-VGS, Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
10
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10msec
10
100
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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