IRF7220PBF Datasheet, PDF (5/7 Pages) International Rectifier – HEXFET Power MOSFET

12
10
8
6
4
2
0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF7220PbF
300
ID
TOP
-4.9A
250
-8.8A
BOTTOM -11A
200
150
100
50
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
100
D = 0.50
10
0.20
0.10
0.05
0.02
P_DM
1
0.01
t1
SINGLE PULSE
t₂
(THERMAL RESPONSE)
Notes:
0.1
0.0001
0.001
0.01
1. Duty factor D = t1 / t 2
2. Peak T _J = P _DM x Z _thJA + T_A
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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