IRF7220PBF Datasheet, PDF (3/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF7220PbF
1000
100
VGS
TOP -4.5V
-4.0V
-3.0V
-2.0V
-1.8V
-1.6V
-1.4V
BOTTOM -1.2V
10
-1.2V
1
0.1
0.1
20µs PULSE WIDTH
TJ= 25 °C
1
10
-V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP -4.5V
-4.0V
-3.0V
-2.0V
-1.8V
-1.6V
-1.4V
BOTTOM -1.2V
10
-1.2V
1
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1
10
-V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
1.0
VDS = -10V
250µs PULSE WIDTH
1.5
2.0
2.5
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = -11A}
1.5
1.0
0.5
V_GS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3