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IRF7220PBF Datasheet, PDF (2/7 Pages) International Rectifier – HEXFET Power MOSFET
IRF7220PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-14 ––– ––– V VGS = 0V, ID = -5mA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.006 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– .0082 0.012
––– .0125 0.020
Ω
VGS = -4.5V, ID = -11A ‚
VGS = -2.5V, ID = -8.8A ‚
VGS(th)
Gate Threshold Voltage
-0.60 ––– ––– V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
8.4 ––– ––– S VDS = -10V, ID = -11A
IDSS
Drain-to-Source Leakage Current
––– ––– -5.0
––– ––– -100
µA
VDS = -11.2V, VGS = 0V
VDS = -11.2V, VGS = 0V, TJ = 70°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -12V
––– ––– 100
VGS = 12V
Qg
Total Gate Charge
––– 84 125
ID = -11A
Qgs
Gate-to-Source Charge
––– 13 20 nC VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
––– 37 55
VGS = -5.0V ‚
td(on)
Turn-On Delay Time
––– 19 –––
VDD = -10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 420 ––– ns ID = -11A
––– 140 –––
RG = 6.2Ω
tf
Fall Time
––– 1040 –––
RD = 0.91Ω ‚
Ciss
Input Capacitance
––– 8075 –––
VGS = 0V
Coss
Output Capacitance
––– 4400 ––– pF VDS = -10V
Crss
Reverse Transfer Capacitance
––– 4150 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
160
147
Max.
-2.5
-88
-1.2
240
220
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = -2.5A, VGS = 0V ‚
TJ = 25°C, IF = -2.5A
di/dt = 100A/µs ‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ When mounted on 1 inch square copper board, t<10 sec
„ Starting TJ = 25°C, L = 1.8mH
RG = 25Ω, IAS = 11A. (See Figure 10)
2
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