IRF7220PBF Datasheet, PDF (4/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF7220PbF
10000
9000
8000
VGS = 0V,
f = 1kHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
C_iss
7000
6000
5000
4000
1
Coss
Crss
-V_DS , Drain-to-Source Voltage (V)
A
10
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
ID = -11A
8
V_DS =-10V
6
4
2
0
0
20
40
60
80 100 120
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150°C
T_J = 25°C
1
0.1
0.0
VGS = 0V _A
0.5
1.0
1.5
2.0
2.5
-V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
100us
1ms
10
10ms
T_A = 25°C
T_J = 150°C
Single Pulse
1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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