IRF6898MPBF_15 Datasheet, PDF (5/9 Pages) International Rectifier – Integrated Monolithic Schottky Diode

IRF6898MTRPbF
1000
100
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
1msec 100μsec
10msec
10
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
1
0.1
0.4
0.7
1.0
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
10
DC
1
Ta = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 11. Maximum Safe Operating Area
225
2.5
200
175
150
2.0
ID = 10mA
125
100
75
1.5
50
25
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
2000
1800
1600
1400
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 1.7A
2.5A
BOTTOM 28A
1200
1000
800
600
400
200
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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March 21, 2013