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IRF6898MPBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – Integrated Monolithic Schottky Diode
IRF6898MTRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
IGSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs1
Pre-Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
25
–––
–––
–––
1.1
–––
–––
–––
–––
175
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
0.02
0.8
1.2
1.6
-4.9
–––
–––
–––
–––
41
15
4.7
15
6.3
19.7
43
0.3
18
46
24
19
5435
1780
359
––– V VGS = 0V, ID = 1.0mA
–––
1.1
1.6
V/°C ID = 10mA ( 25°C-125°C)
i mΩ VGS = 10V, ID = 35A
i VGS = 4.5V, ID = 28A
2.1 V VDS = VGS, ID = 100μA
––– mV/°C VDS = VGS, ID = 10mA
500 μA VDS = 20V, VGS = 0V
100 nA VGS = 16V
-100
VGS = -16V
––– S VDS =13V, ID =28A
62
–––
VDS = 13V
––– nC VGS = 4.5V
–––
ID = 28A
–––
See Fig.15
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
–––
Ãi VDD = 13V, VGS = 4.5V
–––
ID = 28A
––– ns RG= 1.8Ω
–––
See Fig.17
–––
VGS = 0V
––– pF VDS = 13V
–––
ƒ = 1.0MHz
Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãg (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
MOSFET symbol
––– ––– 35
D
A showing the
––– ––– 280
––– ––– 0.75
G
integral reverse
S
p-n junction diode.
i V TJ = 25°C, IS = 28A, VGS = 0V
––– 32
––– 66
48
99
i ns TJ = 25°C, IF =28A
nC di/dt = 300A/μs
Notes:
‡ Pulse width ≤ 400μs; duty cycle ≤ 2%.
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March 21, 2013