IRF6898MPBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Integrated Monolithic Schottky Diode

IRF6898MPbF
IRF6898MTRPbF
HEXFET^® Power MOSFET plus Schottky Diode ‚
l RoHs Compliant Containing No Lead and Bromide ‚
l Integrated Monolithic Schottky Diode
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
R_DS(on)
l Low Profile (<0.7 mm)
lDual Sided Cooling Compatible 
l Low Package Inductance
25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V
Q_{g tot} Q_gd Q_gs2 Q_rr Q_oss V_gs(th)
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
41nC 15nC 4.7nC 66nC 43nC 1.6V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
l 100% Rg tested
S
D
G
D
S
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MX
MP
DirectFET™ ISOMETRIC
Description
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6898MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters
that power high current loads such as the latest generation of microprocessors. The IRF6898MPbF has been optimized for parameters that
are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Gate-to-Source Voltage
e Continuous Drain Current, V_GS @ 10V
e Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
g Pulsed Drain Current
h Single Pulse Avalanche Energy
Ãg Avalanche Current
Max.
25
±16
35
28
213
280
473
28
Units
V
A
mJ
A
3.0
ID = 35A
2.0
TJ = 125°C
1.0
TJ = 25°C
0.0
2
4
6
8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
1 www.irf.com © 2013 International Rectifier
14
12 ^{ID= 28A}
10
VDS= 20V
VDS= 13V
8
6
4
2
0
0
20
40
60
80 100 120
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ T_C measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting T_J = 25°C, L = 1.21mH, R_G = 50Ω, I_AS = 28A.
March 21, 2013