IRF6898MPBF_15 Datasheet, PDF (4/9 Pages) International Rectifier – Integrated Monolithic Schottky Diode

1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
2.3V
1000
100
IRF6898MTRPbF
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
2.3V
1
0.1
0.01
0.1
2.3V
1
≤60μs PULSE WIDTH
Tj = 25°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
TJ = 150°C
100 TJ = 25°C
TJ = -40°C
10
1
VDS = 15V
≤60μs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = C _gd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4 www.irf.com © 2013 International Rectifier
10
2.3V
1
0.1
≤60μs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
1.6
ID = 35A
1.4
VGS = 10V
VGS = 4.5V
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
6.0
TJ = 25°C
5.0
4.0
3.0
Vgs = 3.5V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 12V
Vgs = 15V
2.0
1.0
0.0
0 25 50 75 100 125 150 175 200
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
March 21, 2013