IRF6648TR1 Datasheet, PDF (5/10 Pages) International Rectifier – RoHs Compliant Containing No Lead and Bromide

60
ID = 17A
50
40
30
20
TJ = 125°C
10
TJ = 25°C
0
4
6
8
10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 8. Typical On-Resistance vs. Gate Voltage
1000
TJ = 150°C
100
TJ = 25°C
TJ = -40°C
30
25
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
20
Vgs = 15V
IRF6648
TJ = 25°C
15
10
5
0
0
20
40
60
80
100
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs. Drain Current
6.0
5.0
10
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig12. Maximum Safe Operating Area
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4.0
ID = 150µA
ID = 250µA
3.0 _{ID = 1.0mA}
ID = 1.0A
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 11. Typical Threshold Voltage vs.
Junction Temperature
200
180
ID
TOP
12A
160
18A
140
BOTTOM 34A
120
100
80
60
40
20
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
5