IRF6648TR1 Datasheet, PDF (2/10 Pages) International Rectifier – RoHs Compliant Containing No Lead and Bromide

IRF6648
Electrical Characteristic @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
60 ––– –––
––– 0.076 –––
––– 5.5 7.0
3.0 4.0 4.9
V
V/°C
mΩ
V
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 17A g
V_DS = V_GS, I_D = 150µA
∆V_GS(th)/∆T_J
I_DSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -11 ––– mV/°C
––– ––– 20 µA ^VDS ^{= 60V, V}GS ^{= 0V}
––– ––– 250
V_DS = 48V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA ^VGS ^{= 20V}
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
gfs
Forward Transconductance
31 ––– ––– S ^VDS ^{= 10V, I}D ^{= 17A}
Q_g
Q_gs1
Q_gs2
Q_gd
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
––– 36 50
––– 7.5 –––
V_DS = 30V
––– 2.7 ––– nC ^VGS ^{= 10V}
––– 14 21
I_D = 17A
Q_godr
Gate Charge Overdrive
––– 12 –––
See Fig. 14
Q_sw
Q_oss
Switch Charge (Q_gs2 + Q_gd)
Output Charge
––– 17 –––
––– 21 ––– nC ^VDS ^{= 16V, V}GS ^{= 0V}
R_{G (Internal)}
t_d(on)
t_r
t_d(off)
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 1.0 ––– Ω
––– 16 –––
V_DD = 30V, V_GS = 10V g
––– 29 –––
I_D = 17A
––– 28 ––– ns RG= 6.2Ω
t_f
Fall Time
C_iss
Input Capacitance
C_oss
Output Capacitance
––– 13 –––
––– 2120 –––
––– 600 –––
See Fig. 16
V_GS = 0V
pF ^VDS ^{= 25V}
C_rss
Reverse Transfer Capacitance
––– 170 –––
ƒ = 1.0MHz
C_oss
Output Capacitance
––– 2450 –––
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
C_oss
Output Capacitance
––– 440 –––
V_GS = 0V, V_DS = 48V, f=1.0MHz
Avalanche Characteristics
Parameter
Min. Typ. Max. Units
Conditions
E_AS
Single Pulse Avalanche Energy
––– ––– 47 mJ TJ = 25°C, IS = 34A, RG = 25Ω
L = 0.082mH. See Fig. 13
Diode Characteristics
Parameter
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min.
–––
–––
–––
Typ.
–––
31
37
Max. Units
Conditions
1.3
V ^TJ ^{= 25°C, I}S ^{= 17A, V}GS ^{= 0V g}
47 ns ^TJ ^{= 25°C, I}F ^{= 17A, V}DD ^{= 30V}
56 nC di/dt = 100A/µs g
Notes:
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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