IRF6648TR1 Datasheet, PDF (1/10 Pages) International Rectifier – RoHs Compliant Containing No Lead and Bromide

PD - 97043C
IRF6648
DirectFET™ Power MOSFET ‚
l RoHs Compliant Containing No Lead and Bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Optimized for Synchronous Rectification for 5V
to 12V outputs
l Ideal for 24V input Primary Side Forward Converters
l Low Conduction Losses
l Compatible with Existing Surface Mount Techniques 
Typical values (unless otherwise specified)
V_DSS
V_GS
R_DS(on)
Q_{g tot} Q_gd
60V max ±20V max 5.5mΩ@ 10V 36nC 14nC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
DirectFET™
ISOMETRIC
Description
The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET^TM packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6648 is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a
primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal
performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this
device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_DM
I_S @ T_C = 25°C
I_S @ T_C = 70°C
I_SM
Gate-to-Source Voltage
f Continuous Drain Current, V_GS @ 10V
f Continuous Drain Current, V_GS @ 10V
e Pulsed Drain Current
f Continuous Source Current (Body Diode)
f Continuous Source Current (Body Diode)
e Pulsed Source Current (Body Diode)
Max.
60
±20
86
69
260
81
52
260
Units
V
A
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Repetitive rating; pulse width limited by max. junction temperature.
„ T_C measured with thermocouple mounted to top (Drain) of part.
www.irf.com
1
02/28/06