GA250TS60U Datasheet, PDF (5/10 Pages) International Rectifier – HALF-BRIDGE IGBT INT-A-PAK

42000
36000
30000
24000
 ^{VGE = 0V, f = 1MHz}
C_ies = C_ge + C_{gc ,} C_ce SHORTED
C_res = C_gc
C_oes = C_ce + C_gc
 C_ies
18000
12000
6000
C _oes
C _res
0
1
10
100
V_CE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA250TS60U
 20
V_CC = 400V
I _C = 250A
16
12
8
4
0
0
200 400 600 800 1000 1200
Q_G, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
 45 VCC = 360V
V_GE = 15V
T_J =12255^°° C
40 ^IC ^{= 250A}
35
30
25
20
0
10
20
30
40
R_G , Gate Resistance (OΩhm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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 100 RGG1=1=51Ω5;ORhGm2 = 0 Ω
V_GE = 15V
V_CC = 360V
10
 I_C = 250 A
 I_C = 125 A
 I_C =62.5 A
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5