GA250TS60U Datasheet, PDF (4/10 Pages) International Rectifier – HALF-BRIDGE IGBT INT-A-PAK

GA250TS60U
250
200
150
100
50
0
25
50
75
100
125
150
T_C , Case Temperature ( ^° C)
 2.2
V_GE = 15V
80 us PULSE WIDTH
2.0
1.8
 I_C = 250 A
1.6
 I_C = 125 A
1.4
 I_C =62.5 A
1.2
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
0.1
D = 0.50
0 .2 0
0 .1 0
0 .0 5
0.02
0.01
0.01
0.0001
P_{D M}
S IN G LE P U LS E
(THERM AL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak TJ = P_DM x Z _thJC + T_C
0.001
0.01
0.1
1
10
100
t₁, R e ctan gular Pu lse D uratio n (sec)
A
1000
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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