GA250TS60U Datasheet, PDF (1/10 Pages) International Rectifier – HALF-BRIDGE IGBT INT-A-PAK

"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED^™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD - 50047D
GA250TS60U
Ultra-Fast^TM Speed IGBT
V_CES = 600V
V_{CE(on) typ.} = 1.9V
@V_GE = 15V, I_C = 250A
Absolute Maximum Ratings
V_CES
I_C @ T_C = 25°C
I_CM
I_LM
I_FM
V_GE
V_ISOL
P_D @ T_C = 25°C
P_D @ T_C = 85°C
T_J
T_STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector CurrentQ
Peak Switching CurrentR
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
250
500
500
500
±20
2500
780
400
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
R_θJC
R_θJC
R_θCS
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink S
Mounting Torque, Case-to-Terminal 1, 2 & 3 T
Weight of Module
www.irf.com
Typ.
—
—
0.1
—
—
200
Max.
0.16
0.35
—
6.0
5.0
—
Units
°C/W
N^.m
g
1
05/14/02