GA250TS60U Datasheet, PDF (3/10 Pages) International Rectifier – HALF-BRIDGE IGBT INT-A-PAK

GA250TS60U
200
160
120
Square wave:
60% of rated
v o ltag e
80
I
40
Ideal diodes
For both:
D uty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P o w e r D is s ip a tio n = 170 W
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
1000
 T_J = 25 ^oC
 T_J = 12550 ^oC
100
1000
 T_J = 12550 ^oC
100
 T_J = 25 ^oC
10
 VGE = 15V
20µs PULSE WIDTH
10
1
2
3
4
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
 VVCCCE== 5205V
5µ8s0µPsUPLUSLESEWWIDIDTTHH
1
5
6
7
8
9
V_GE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3