GA100TS120U Datasheet, PDF (5/10 Pages) International Rectifier – HALF-BRIDGE IGBT INT-A-PAK

GA100TS120U
35000
28000
21000
V_GE = 0V, f = 1MHz
C_ies = C_ge + C_{gc ,} C_ce
C_res = C_gc
C_oes = C_ce + C_gc
SHORTED
C_ies
14000
7000
C_oes
C_res
0
1
10
100
V_CE , Collector-to-Emitter Voltage (V)
20
V_CC = 400V
I _C = 113A
16
12
8
4
0
0
300
600
900
Q_G , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
60
V_CC = 720V
V_GE = 15V
T_J = 125 ^°C
I_C = 100A
50
40
1000 _{RGG1=1=5OΩh;RmG2 = 0 Ω}
V_GE = 15V
V_CC = 720V
100
10
I_C = 200 A
I_C = 100 A
I_C = 50 A
30
10
20
30
40
50
R_G , Gate Resistance (Ohm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5