GA100TS120U Datasheet, PDF (2/10 Pages) International Rectifier – HALF-BRIDGE IGBT INT-A-PAK

GA100TS120U
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)CES Collector-to-Emitter Breakdown Voltage 1200 —
V_CE(on)
Collector-to-Emitter Voltage
— 2.4
— 2.2
V_GE(th)
Gate Threshold Voltage
3.0 —
∆V_GE(th)/∆T_J Temperature Coeff. of Threshold Voltage — -11
g_fe
Forward Transconductance ➃
— 136
I_CES
Collector-to-Emitter Leaking Current
——
——
V_FM
Diode Forward Voltage - Maximum
— 3.3
— 3.2
I_GES
Gate-to-Emitter Leakage Current
——
—
V_GE = 0V, I_C = 1mA
2.9
V_GE = 15V, I_C = 100A
— V V_GE = 15V, I_C = 100A, T_J = 125°C
6.0
I_C = 1.25mA
— mV/°C V_CE = V_GE, I_C = 1.25mA
— S V_CE = 25V, I_C = 100A
1.0 mA V_GE = 0V, V_CE = 1200V
10
V_GE = 0V, V_CE = 1200V, T_J = 125°C
4.0 V I_F = 100A, V_GE = 0V
—
I_F = 100A, V_GE = 0V, T_J = 125°C
250 nA V_GE = ±20V
Dynamic Characteristics - T_J = 125°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Qge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_{off (1)}
E_{ts (1)}
C_ies
C_oes
C_res
t_rr
I_rr
Q_rr
di_(rec)M_/dt
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t_b
— 830 1245
V_CC = 400V
— 140 210 nC I_C = 124A
— 275 412
T_J = 25°C
— 172 —
R_G1 = 15Ω, R_G2 = 0Ω,
— 141 — ns I_C = 100A
— 435 —
V_{CC =} 720V
— 343 —
V_GE = ±15V
— 14 — mJ
— 21 —
— 35 52
— 18672 —
V_GE = 0V
— 830 — pF V_CC = 30V
— 161 —
ƒ = 1 MHz
— 149 — ns I_C = 100A
— 104 — A R_G1 = 15Ω
— 7664 — µC R_G2 = 0Ω
— 1916 — A/µs V_{CC =} 720V
di/dt»1300A/µs
2
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