GA100TS120U Datasheet, PDF (3/10 Pages) International Rectifier – HALF-BRIDGE IGBT INT-A-PAK

GA100TS120U
100
75
S quare wave:
50
60% of rated
voltage
I
25
Ideal diodes
0
0.1
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
G ate drive as specified
P ow er D is s ipation = 170W
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
1000
1000
T_J = 125 ^°C
100
T_J = 25 °C
T_J = 125 ^°C
100
T_J = 25 ^°C
10
10
1.0
V_GE = 15V
80µs PULSE WIDTH
2.0
3.0
4.0
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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V_CC = 50V
5µs PULSE WIDTH
1
5
6
7
8
V_GE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3