GA100TS120U Datasheet, PDF (4/10 Pages) International Rectifier – HALF-BRIDGE IGBT INT-A-PAK

GA100TS120U
120
80
40
4.0
V_GE = 15V
80 us PULSE WIDTH
3.0
I_C =200 A
I_C =100 A
2.0
I_C = 50 A
0
25
50
75
100
125
150
T_C , Case Temperature (° C)
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
D = 0.50
0.1
0.20
0 .1 0
0.05
0.02
0.01
S IN G LE P U LS E
(THERMAL RESPONSE)
P_DM
t1
t2
Notes:
1. Duty factor D = t₁ / t ₂
0.01
0.0001
0.001
0.01
2. Peak TJ = P_DM x Z _thJC + T_C
A
0.1
1
10
t₁, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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