AUIRL1404Z Datasheet, PDF (5/15 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRL1404Z/S/L
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
6.0
ID= 75A
5.0
4.0
VDS= 32V
VDS= 20V
3.0
2.0
1.0
0.0
0
20
40
60
80
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
0.0
VGS = 0V
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
5