AUIRL1404Z Datasheet, PDF (1/15 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 96331
AUTOMOTIVE GRADE
AUIRL1404Z
AUIRL1404ZS
Features
l Logic Level
AUIRL1404ZL
HEXFET^® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
V_(BR)DSS
40V
l 175°C Operating Temperature
R_DS(on) typ. 2.5mΩ
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free, RoHS Compliant
max. 3.1mΩ
là I_{D (Silicon Limited)} 180A
l Automotive Qualified *
S
I_{D (Package Limited)} 160A
Description
Specifically designed for Automotive applications, _D
this HEXFET^® Power MOSFET utilizes the latest
D
D
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche
DS
G
DS
G
DS
G
rating . These features combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
TO-220AB
AUIRL1404Z
D²Pak
TO-262
AUIRL1404ZS AUIRL1404ZL
applications.
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C _{Continuous Drain Current, VGS @ 10V} (Silicon Limited)
l ^Max.
180
Units
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V(Silicon Limited)
130
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V(Package Limited)}
I_DM
Pulsed Drain Current
160
790
A
P_D @T_C = 25°C _{Power Dissipation}
200
W
V_GS
E_AS
E_AS (Tested )
I_AR
E_AR
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
1.3
± 16
190
490
See Fig.12a, 12b, 15, 16
W/°C
V
mJ
A
mJ
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Parameter
R_θJC
Junction-to-Case
R_θCS
i Case-to-Sink, Flat, Greased Surface
R_θJA
i Junction-to-Ambient
R_θJA
jà Junction-to-Ambient (PCB Mount)
Typ.
–––
0.50
–––
–––
Max.
k 0.75
–––
62
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/26/10