AUIRL1404Z Datasheet, PDF (2/15 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRL1404Z/S/L
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
40 ––– ––– V V_GS = 0V, I_D = 250µA
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
––– 0.034 –––
––– 2.5 3.1
––– ––– 4.7
––– ––– 5.9
V/°C Reference to 25°C, I_D = 1mA
e V_GS = 10V, I_D = 75A * *
e ^mΩ V_GS = 5.0V, I_D = 40A
e V_GS = 4.5V, I_D = 40A
V_GS(th)
Gate Threshold Voltage
1.4 ––– 2.7 V V_DS = V_GS, I_D = 250µA
gfs
Forward Transconductance
120 ––– ––– S V_DS = 10V, I_D = 75A* *
I_DSS
Drain-to-Source Leakage Current
––– ––– 20 µA V_DS = 40V, V_GS = 0V
––– ––– 250
V_DS = 40V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 200 nA V_GS = 16V
Gate-to-Source Reverse Leakage
––– ––– -200
V_GS = -16V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 75 110
I_D = 75A* *
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
28
40
–––
–––
e nC VDS = 32V
V_GS = 5.0V
t_d(on)
Turn-On Delay Time
––– 19 –––
V_DD = 20V
t_r
Rise Time
––– 180 –––
I_D = 75A* *
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
–––
–––
30
49
–––
–––
e ns RG = 4.0Ω
V_GS = 5.0V
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
L_S
Internal Source Inductance
––– 7.5 –––
from package
G
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 5080 –––
––– 970 –––
––– 570 –––
––– 3310 –––
––– 870 –––
––– 1280 –––
and center of die contact
S
V_GS = 0V
V_DS = 25V
pF ƒ = 1.0MHz
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
f ^{VGS = 0V, VDS = 32V, ƒ = 1.0MHz}
V_GS = 0V, V_DS = 0V to 32V
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 180
MOSFET symbol
D
A showing the
––– ––– 720
integral reverse
G
––– ––– 1.3
e ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 75A* * , V_GS = 0V
––– 26
––– 18
39
27
e ^{ns TJ = 25°C, IF = 75A* * , VDD = 20V}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
∗ ∗ Note  through Š , are on page 3
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