AUIRL1404Z Datasheet, PDF (4/15 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRL1404Z/S/L
1000
100
TOP
BOTTOM
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
10
1
0.1
3.0V
60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
100
10
3.0V
TOP
BOTTOM
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1.0
2
VDS = 10V
60µs PULSE WIDTH
3 4 5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
200
TJ = 25°C
150
100
TJ = 175°C
50
0
0
VDS = 10V
50
100
150
200
ID,Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
4
Fig 4. Typical Forward Transconductance
vs. Drain Current
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