AUIRF7303Q Datasheet, PDF (5/10 Pages) International Rectifier – Advanced Planar Technology Dual N Channel MOSFET

100
10
TJ = 175°C
1
TJ = 25°C
VGS = 0V
0.1
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
6
5
4
3
2
1
0
25
50 75 100 125 150 175
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
1000
100
10
1
AUIRF7303Q
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μs
1ms
10ms
DC
0.1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.01
0.10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
1800
1600
1400
1200
ID
TOP 0.9A
1.4A
BOTTOM 2.7A
1000
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 10. Maximum Avalanche Energy vs. DrainCurrent
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T _A
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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