AUIRF7303Q Datasheet, PDF (4/10 Pages) International Rectifier – Advanced Planar Technology Dual N Channel MOSFET

AUIRF7303Q
100
10
1
TOP
BOTTOM
VGS
15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
2.5V
0.1
2.5V
0.01
0.1
≤60μs PULSE WIDTH Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VDS = 15V
≤60μs PULSE WIDTH
10
TJ = 175°C
1
TJ = 25°C
100
10
TOP
BOTTOM
VGS
15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
2.5V
1
2.5V
≤60μs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
ID = 5.3A
VGS = 10V
1.5
1.0
0.1
1
2
3
4
5
6
7
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = C _gd
Coss = Cds + Cgd
1000
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
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0.5
-60 -20 20 60 100 140 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
14.0
ID= 2.7A
12.0
VDS= 24V
10.0
VDS= 15V
VDS= 6.0V
8.0
6.0
4.0
2.0
0.0
0
5
10
15
20
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
4