AUIRF7303Q Datasheet, PDF (2/10 Pages) International Rectifier – Advanced Planar Technology Dual N Channel MOSFET

AUIRF7303Q
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30 ––– ––– V V_GS = 0V, I_D = 250μA
–––
–––
–––
0.03
–––
–––
–––
0.05
0.08
V/°C Reference to 25°C, I_D = 1mA
ff _Ω
V_GS = 10V, I_D = 2.7A
V_GS = 4.5V, I_D = 2.1A
V_GS(th)
Gate Threshold Voltage
1.0 ––– 3.0
V V_DS = V_GS, I_D = 100μA
gfs
Forward Transconductance
5.6 ––– ––– S V_DS = 15V, I_D = 2.7A
I_DSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
μA
V_DS = 24V, V_GS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– -100
––– 100
nA
V_GS = 20V
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 14 21
I_D = 2.7A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– 1.5
––– 4.4
2.3
6.6
f nC VDS = 15V
V_GS = 10V
t_d(on)
Turn-On Delay Time
––– 2.9 –––
V_DD = 15V
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
––– 6.2 –––
––– 15 –––
––– 7.8 –––
ns
I_D = 2.7A
f ^{RG = 6.8Ω}
V_GS =10V
C_iss
Input Capacitance
––– 515 –––
V_GS = 0V
C_oss
Output Capacitance
––– 217 ––– pF V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 90 –––
ƒ = 1.0MHz
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Ù ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
26
50
Max. Units
Conditions
MOSFET symbol
3.0
D
showing the
A
integral reverse
G
44
S
1.0
f ^{p-n junction diode.}
V T_J = 25°C, I_S = 2.7A, V_GS = 0V
39
75
f ^{ns TJ = 25°C,IF = 2.7A}
nC ^{di/dt = 100A/μs}
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 118mH, R_G = 50Ω, I_AS = 2.7A, V_GS =10V. Part not recommended for use above this value.
ƒ I_SD ≤ 2.7A, di/dt ≤ 389A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… This value determined from sample failure population, starting T_J = 25°C, L = 118mH, R_G = 50Ω, I_AS = 2.7A, V_GS =10V.
† Surface mounted on FR-4 board, t ≤ 10sec..
www.irf.com
2