AUIRF7303Q Datasheet, PDF (1/10 Pages) International Rectifier – Advanced Planar Technology Dual N Channel MOSFET

Features
l Advanced Planar Technology
l Dual N Channel MOSFET
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUTOMOTIVE GRADE
PD - 97654C
AUIRF7303Q
HEXFET^® Power MOSFET
S1
1
V ⁸
D1
(BR)DSS
G1
2
S2
3
7
D1
6 _{D2 RDS(on) max.}
G2
4
5
D2
Top View
I_D
30V
0.05Ω
5.3A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
SO-8
AUIRF7303Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
E_AS
E_AS(Tested)
dv/dt
T_J
T_STG
Thermal Resistance
R_θJA
Parameter
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
g Single Pulse Avalanche Energy
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Parameter
h Junction-to-Ambient
Max.
5.3
4.4
44
2.4
0.02
± 20
414
1160
1.6
-55 to + 175
Max.
62.5
Units
A
W
W/°C
V
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/24/11