AUIRF1404 Datasheet, PDF (5/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF1404
10000
8000
6000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
Coss
2000
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
20
I_D = 121A
16
V_DS= 32V
V_DS= 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
50
100
150
200
Q_G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
T_J = 175° C
100
10
T_J = 25° C
1
0.1
0.0
V _GS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_SD ,Source-to-Drain Voltage (V)
10000
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
100
100us
1ms
10
10ms
T_C = 25 °C
T_J = 175 °C
Single Pulse
1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
5