AUIRF1404 Datasheet, PDF (4/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF1404
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
10
4.5V
20μs PULSE WIDTH
TJ = 25 ^°C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
10
4.5V
20μs PULSE WIDTH
TJ = 175°C
1
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
T_J = 25^°C
T_J = 175°C
V _DS= 25V
20μs PULSE WIDTH
10
4 5 6 7 8 9 10 11 12
V_GS, Gate-to-Source Voltage (V)
2.5 _{ID = 202A}
2.0
1.5
1.0
0.5
V_GS= 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J , Junction Temperature (^° C)
Fig 3. Typical Transfer Characteristics
4
Fig 4. Normalized On-Resistance
Vs. Temperature
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