AUIRF1404 Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD-97684
AUIRF1404
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This ben-
efit combined with the fast switching speed and rugge-
dized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
HEXFET^® Power MOSFET
D
V_(BR)DSS
40V
R_DS(on) typ.
3.5mΩ
max
I_{D (Silicon Limited)}
h ^4.0mΩ
202A
S
I_{D (Package Limited)}
160A
D
G
Gate
DS
G
TO-220AB
AUIRF1404
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
I_DM
c Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
i Junction-to-Case
R_θCS
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
Max.
202h
143
160
808
333
2.2
± 20
620
See Fig. 12a, 12b, 15, 16
1.5
-55 to + 175
y y ³⁰⁰
10 lbf in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/17/11