AUIRF1404 Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF1404
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
40 ––– ––– V V_GS = 0V, I_D = 250μA
f ^{ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.039 ––– V/°C Reference to 25°C, ID = 1mA}
R_DS(on)
Static Drain-to-Source On-Resistance ––– 3.5 4.0 _mΩ V_GS = 10V, I_D = 121A
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250μA
gfs
Forward Transconductance
76 ––– ––– S V_DS = 25V, I_D = 121A
I_DSS
Drain-to-Source Leakage Current
––– ––– 20 μA V_DS = 400V, V_GS = 0V
––– ––– 250
V_DS = 32V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 131 196
I_D = 121A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
36
37
–––
56
f nC VDS = 32V
V_GS = 10V
t_d(on)
Turn-On Delay Time
––– 17 –––
V_DD = 20V
t_r
Rise Time
––– 190 –––
I_D = 121A
t_d(off)
Turn-Off Delay Time
––– 46 ––– ns R_G = 2.5 Ω
t_f
Fall Time
––– 33 –––
R_D = 0.2 Ω
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
L_S
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
C_oss
Output Capacitance
C_oss
C_oss eff.
g ^{Output Capacitance}
Effective Output Capacitance
Diode Characteristics
––– 5669 –––
––– 1659 –––
––– 223 –––
––– 6205 –––
––– 1467 –––
––– 2249 –––
and center of die contact
S
V_GS = 0V
pF V_DS = 25V
ƒ = 1.0MHz, See Fig. 5
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 32V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 32V
I_S
Parameter
Continuous Source Current
h ^{Min. Typ. Max. Units}
Conditions
––– ––– ²⁰²
MOSFET symbol
D
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
A showing the
––– ––– 808
integral reverse G
––– ––– 1.5
f ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 121A, V_GS = 0V
–––
–––
78
163
117
245
f ^{ns TJ = 25°C, IF = 121A}
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting T_J = 25°C, L = 85μH
R_G = 25Ω, I_AS = 121A. (See Figure 12)
ƒ I_SD ≤ 121A, di/dt ≤ 130A/μs, V_DD ≤
V_(BR)DSS, T_J ≤ 175°C.
2
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 160A.
‡ R_θ is measured at T_J of approximately 90°C.
www.irf.com