IRFP31N50L Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A)

IRFP31N50L
1000000
100000
10000
1000
100
10
1
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
16 _{ ID = 31A}
12
 ^{VDS= 400V}
V_DS= 250V
V_DS= 100V
8
4
0
0
40
80
120
160
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
 T_J = 150^° C
10
 T_J = 25^° C
1
0.1
0.2
 ^V GS ^{= 0 V}
0.6
1.0
1.4
1.8
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
 OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
 10us
 100us
10
 1ms
 ^{TC= 25 °C}
T_J = 150 °C
Single Pulse
1
10
100
 10ms
1000
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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