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| IRFP31N50L Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A) | |||
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SMPS MOSFET
PD - 94081
IRFP31N50L
Applications
HEXFET® Power MOSFET
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
l ZVS and High Frequency Circuit
VDSS
RDS(on) typ.
ID
500V
0.15â¦
31A
l PWM Inverters
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
l High Performance Optimised Anti-parallel Diode
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
Max.
31
20
124
460
3.7
± 30
19
-55 to + 150
300
10 lbfâ¢in (1.1Nâ¢m)
Units
A
W
W/°C
V
V/ns
°C
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
IRRM
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Â
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 31
MOSFET symbol
D
A showing the
âââ âââ 124
integral reverse
G
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 31A, VGS = 0V Â
âââ 170 250
âââ 220 330
ns
TJ = 25°C
TJ = 125°C
IF = 31A
di/dt = 100A/µs Â
âââ 570 860 nC TJ = 25°C
âââ 1.2 1.8 µC TJ = 125°C
âââ 7.9 12 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l Bridge Converters
l All Zero Voltage Switching
www.irf.com
1
05/23/01
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