IRFP31N50L Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A)

1000
^TOP
100
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
10
1
0.1
0.01
0.1
5.0V
 ^{20µs PULSE WIDTH}
TJ = 25 ^°C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRFP31N50L
 100
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM5.0V
10
1
5.0V
0.1
0.1
 ^{20µs PULSE WIDTH}
T_J = 150 °C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
 T_J = 150^° C
10
 T_J = 25^°C
1
0.1
4
 V DS= 50V
20µs PULSE WIDTH
5
6
7
8
9 10 11
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.0 _{ ID = 31A}
2.5
2.0
1.5
1.0
0.5
 ^VGS ^{= 10V}
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (^° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3