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| IRFP31N50L Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A) | |||
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IRFP31N50L
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
500 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.28 âââ V/°C Reference to 25°C, ID = 1mAÂ
RDS(on)
Static Drain-to-Source On-Resistance âââ 0.15 0.18 ⦠VGS = 10V, ID = 19A Â
VGS(th)
Gate Threshold Voltage
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
âââ âââ 50
âââ âââ 2.0
µA VDS = 500V, VGS = 0V
mA VDS = 400V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
15 âââ âââ S VDS = 50V, ID = 19A Â
âââ âââ 210
ID = 31A
âââ âââ 58 nC VDS = 400V
âââ âââ 100
VGS = 10V, See Fig. 6 and 13 Â
âââ 28 âââ
VDD = 250V
âââ 115 âââ ns ID = 31A
âââ 54 âââ
RG = 4.3â¦
âââ 53 âââ
VGS = 10V,See Fig. 10 Â
âââ 5000 âââ
VGS = 0V
âââ 553 âââ
VDS = 25V
âââ 59 âââ pF Æ = 1.0MHz, See Fig. 5
âââ 6630 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
âââ 155 âââ
âââ 276 âââ
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
460
31
46
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
âââ
0.24
âââ
Max.
0.26
âââ
40
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
 Starting TJ = 25°C, L = 1mH, RG = 25â¦,
IAS = 31A (See Figure 12a).
 ISD = 31A, di/dt ⤠422A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C.
2
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
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