IRF9204PBF Datasheet, PDF (4/7 Pages) International Rectifier – Advanced Process Technology, Ultra Low On-Resistance

IRF9204PbF
100000
10000
VGS = 0V, f = 1 KHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
14.0
ID= -37A
12.0
VDS= -32V
10.0
VDS= -20V
8.0
6.0
1000
Coss
Crss
4.0
2.0
100
1
10
100
0.0
0 20 40 60 80 100 120 140 160 180
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 7. Typical Capacitance Vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED BY R _DS(on)
100
10
100μsec
1msec
LIMITED BY PACKAGE
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
80
Limited By Package
70
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 10. Maximum Drain Current Vs. Case Temperature
10
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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