IRF9204PBF Datasheet, PDF (3/7 Pages) International Rectifier – Advanced Process Technology, Ultra Low On-Resistance

IRF9204PbF
1000
100
10
TOP
BOTTOM
VGS
-15V
-10V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
≤60μs PULSE WIDTH
Tj = 25°C
1000
100
TOP
BOTTOM
VGS
-15V
-10V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
1
-2.5V
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
10
1
0.1
-2.5V
≤60μs PULSE WIDTH Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
60
100
TJ = 175°C
10
50
TJ = 25°C
40
30
TJ = 175°C
1
TJ
=
25°C
VDS
=
-25V
≤60μs PULSE WIDTH
0.1
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1000
100
TJ = 175°C
20
10
VDS = -5V
380μs PULSE WIDTH
0
0
20
40
60
80
100
ID,Drain-to-Source Current (A)
Fig 4. Typical Forward Transconductance Vs. Drain Current
1.6
ID = -37A
VGS = -10V
1.4
10
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, Source-to-Drain Voltage (V)
Fig 5. Typical Source-Drain Diode Forward Voltage
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1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance Vs. Temperature
3