IRF9204PBF Datasheet, PDF (2/7 Pages) International Rectifier – Advanced Process Technology, Ultra Low On-Resistance

IRF9204PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V_GS(th)
gfs
I_DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
t_d(on)
Turn-On Delay Time
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
-40 ––– ––– V VGS = 0V, ID = -250μA
–––
–––
–––
0.03
–––
–––
–––
16
23
V/°C Reference to 25°C, ID = -1mA
ee _mΩ
V_GS = -10V, I_D = -37A
V_GS = -4.5V, I_D = -30A
-1.0 -2.0 -3.0 V VDS = VGS, ID = -100μA
29 ––– ––– S VDS = -10V, ID = -37A
––– ––– -25 _μA VDS = -40V, VGS = 0V
––– ––– -250
V_DS = -40V, V_GS = 0V, T_J = 125°C
––– ––– -100 _nA VGS = -20V
––– ––– 100
V_GS = 20V
––– 149 224
I_D = -37A
–––
–––
27
31
–––
–––
e nC VDS = -32V
V_GS = -10V
––– 27 –––
V_DD = -20V
––– 383 –––
––– 139 –––
––– 153 –––
ns ^{ID = -37A}
e ^{RG = 7.5 Ω}
V_GS = -10V
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH
G
from package
––– 7.5 –––
and center of die contact
S
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 7676 –––
––– 654 –––
––– 539 –––
––– 1747 –––
––– 598 –––
––– 797 –––
V_GS = 0V
V_DS = -25V
ƒ = 1.0KHz
pF
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0KHz
f ^{VGS = 0V, VDS = -32V, ƒ = 1.0KHz}
V_GS = 0V, V_DS = 0V to -32V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
MOSFET symbol
D
––– ––– -74
A showing the
I_SM
Ù ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
––– ––– -300
––– ––– -1.3
integral reverse
G
e ^{p-n junction diode.}
S
V TJ = 25°C, IS = -37A, VGS = 0V
––– 51 77
––– 377 566
e ^{ns TJ = 25°C, IF = -37A, VDD = -20V}
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.399mH
R_G = 25Ω, I_AS = -37A, V_GS =-10V. Part not recommended for
use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ C_oss eff. is a fixed capacitance that gives the same charging
time as C_oss while V_DS is rising from 0 to 80% V_DSS .
2
… Limited by T_Jmax , see Fig.17a, 17b, 14, 15 for typical repetitive
avalanche performance.
† This value determined from sample failure population. 100%
tested to this value in production.
‡ This is only applied to TO-220AB pakcage.
ˆ R_θ is measured at T_J approximately 90°C
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