IRF9204PBF Datasheet, PDF (1/7 Pages) International Rectifier – Advanced Process Technology, Ultra Low On-Resistance

PD - 96277B
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
l Lead-Free
Description
This HEXFET^® Power MOSFET utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
IRF9204PbF
G
G
G a te
HEXFET^® Power MOSFET
D
V_DSS = -40V
R_DS(on) = 16mΩ
I_D = -74A
S
D
S
D
G
TO-220AB
IRF9204PbF
D
D ra in
S
S o u rce
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
™ Pulsed Drain Current
Power Dissipation
Linear Derating Factor
V_GS
E_{AS (Thermally limited)}
E_AS (Tested )
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Max.
-74
-53
-56
-300
143
0.95
± 20
270
502
See Fig.17a, 17b, 14, 15
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
R_θCS
i Case-to-Sink, Flat, Greased Surface
R_θJA
i Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
1.05
–––
62
Units
°C/W
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1
05/23/11