IRF7759L2PBF_15 Datasheet, PDF (4/11 Pages) International Rectifier – Optimized for Synchronous Rectification

IRF7759L2PbF
1000
100
10
TOP
BOTTOM
VGS
15V
10V
7.00V
5.50V
5.00V
4.50V
4.00V
3.75V
1
0.1
0.01
0.1
3.75V
≤60μs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000
VDS = 25V
≤60μs PULSE WIDTH
100
1000
100
TOP
BOTTOM
VGS
15V
10V
7.00V
5.50V
5.00V
4.50V
4.00V
3.75V
3.75V
10
1
0.1
≤60μs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.5
ID = 96A
VGS = 10V
2.0
10
1.5
TJ = 175°C
TJ = 25°C
1
TJ = -40°C
1.0
0.1
2 2.5 3 3.5 4 4.5 5 5.5 6
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
0.5
-60 -20 20 60 100 140 180
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
14
ID= 96A
12
10
VDS= 60V
VDS= 38V
VDS= 15V
8
6
4
2
100
1
10
100
0
0
50 100 150 200 250 300
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
QG, Total Gate Charge (nC)
Fig 9. Typical Total Gate Charge vs
Gate-to-Source Voltage
4
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February 24, 2014